SK Hynix has introduced a UFS 4.1 mobile solution featuring the world’s first 321-layer 1Tb TLC 4D NAND flash memory. The new product delivers leading performance with low power consumption and a 15% thinner design, making it ideal for ultra-thin flagship smartphones. This launch reinforces SK Hynix’s position as a “full-scale AI-oriented memory supplier” in the NAND flash memory market.
As edge AI demand grows, mobile devices require a balance between computing performance and battery efficiency. Compared to the previous 238-layer product, the new solution offers 7% higher energy efficiency and a reduced thickness from 1mm to 0.85mm. It supports sequential read speeds up to 4300MB/s, while random read and write speeds increase by 15% and 40% respectively, achieving world-class performance. This enables real-time data processing for edge AI, improving application efficiency and responsiveness.
The product will be available in 512GB and 1TB capacities, with sampling verification planned within this year and mass production scheduled for the first quarter of next year. SK Hynix also aims to complete development of consumer-grade and data-center-grade SSDs this year, expanding its AI-focused product portfolio and further solidifying its position as a full-scale AI-oriented memory supplier.
